Transistors drivers
The drivers are intended to control MOSFETs and IGBTs with collector (drain) current up to 1200A and breakdown voltage up to 6500V.The drivers are represented with module version(for mounting to printed circuit board), for remote mounting and mounting directly to power transistor module. These drivers include drivers' analogues by Semikron and CT Concept production.
You also can see drivers for Chinese market
The 2MD1180P-B driver is a two–channel driver of high-power transistors with independent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or I..
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The 2MD1180P-B1 driver is a two–channel driver of high-power transistors with independent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or ..
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The 2MD180P-B driver is a two–channel driver of high-power transistors with independent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IG..
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The 2MD180P-B1 driver is a two–channel driver of high-power transistors with independent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or I..
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The 2DR180P-B driver is a two–channel driver of high-power transistors with field control, designed for independent galvanically isolated control of two high-power transistors with a maximum permissib..
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The 2DR180P-B1 driver is a two–channel driver of high-power transistors with field control, designed for independent galvanically isolated control of two high-power transistors with a maximum permissi..
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The MD1120P-A driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor with maximum permissible currents and vo..
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The MD1120P-A1 driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor with maximum permissible currents and v..
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The MD150A driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor. The driver is an amplifier – generator of ..
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The MD150B driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor. The driver is an amplifier – generato..
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The MD150C driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor. The driver is an amplifier – generato..
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The DM180P-B driver is a single–channel driver of high-power transistors with control, designed for galvanically isolated control of a high-power field-controlled transistor (MOSFET or IGBT) with a ma..
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The DM180P-B1 driver is a single–channel driver of high-power transistors with control, designed for galvanically isolated control of a high-power field-controlled transistor (MOSFET or IGBT) with a m..
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The MD2170P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors (half-bridge) with a..
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The MD2180P-B driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT..
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The MD2180P-B1 driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGB..
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The IGBT and silicon carbide transistor MD2200 driver of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (SiC-..
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The IGBT and silicon carbide transistor MD2200 driver of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (SiC-..
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The MD2300P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors with a maximum permi..
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The MD270P-B driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated dependent or independent control of two high-power transisto..
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The MD280P-B driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT)..
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The MD280P-B1 driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT..
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The DR1180P-B1 driver is a single–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of one high-power transistor with a m..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transisto..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltage of ..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltag..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltag..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltage of ..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltag..
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The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltag..
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The DR1350P-BF-33 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful tran..
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The DR1350P-BF-45 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful..
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The DR1350P-BF-65 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful..
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The DR1350P-BF2 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful transi..
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The DR1350P-BF3-17 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful tra..
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The DR1350P-BF3-25 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerfu..
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The DR1350P-BF3-33 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerfu..
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The DR1350P-BF3-45 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerfu..
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The DR1350P-BF3-65 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerfu..
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The DR1480P-B1 driver is a single–channel driver of high-power field-controlled transistors, designed for galvanically isolated control of a high-power field-controlled transistor (MOSFET or IGBT) wit..
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The DR180P-B driver is a single–channel driver of high-power field-controlled transistors, designed for galvanically isolated control of a high-power field-controlled transistor (MOSFET or IGBT) with ..
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The DR180P-B1 driver is a single–channel driver of high-power field-controlled transistors, designed for galvanically isolated control of a high-power field-controlled transistor (MOSFET or IGBT) with..
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The DR2162P-B1 driver is a semi–bridge driver for high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a maximu..
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The DR2180P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a max..
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The DR2180P-B2 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B3 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B4 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B5 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-B6 driver (hereinafter referred to as the driver) is a two–channel driver of high–power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control ..
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The DR2180P-B7 driver (hereinafter referred to as the driver) is a two–channel driver of high–power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated con..
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The DR2180P-BF driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
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The DR2180P-BF1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P-BF1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The DR2180P-BF5 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a ma..
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The IGBT and silicon carbide transistor driver DR2200P-B1 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transist..
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The IGBT and silicon carbide transistor driver DR2200P-B2 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (..
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The DR2300 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of six high-power transistor modules in a ha..
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The DR2300 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of six high-power transistor modules in a ha..
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The DR2300 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of six high-power transistor modules in a ha..
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The DR280P-B driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a maxim..
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The DR280P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a maxi..
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The DR4100P-B driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half-bridges) ..
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The DR4100P-B1 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half-bridges)..
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The DR4100P-B5 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half bridges)..
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The DR4100P-B6 driver is a four–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of four high-power transistors (two half bridges)..
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The DR4120P-A driver is a four–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents and ..
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The DR4120P-B driver is a four–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents..
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The DR6100P-B driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges) ..
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The DR6100P-B1 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B2 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B3 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B6 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6100P-B7 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
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The DR6120P-A driver is a six–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents and v..
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The DR6120P-B driver is a six–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents ..
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The DR7100P-B4 driver is a seven–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridge..
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The DR7120P-A driver is a seven–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents and..
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The DR7120P-B driver is a seven–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible current..
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The DRA180P-B-12 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The driver is a..
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The DRA180P-B-17 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The driver..
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The DRA180P-B-25 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The driver..
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The DRA180P-B-33 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The driver..
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The DRA180P-B1-12 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The driver is ..
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The DRA180P-B1-17 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The drive..
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The DRA180P-B1-25 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The drive..
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The DRA180P-B1-33 driver is a single–channel driver of high-power transistors with field control, designed for galvanically isolated control of a high-power transistor (MOSFET or IGBT). The drive..
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