DR4120P-B

The DR4120P-B driver is a four–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents and voltages of 600V/600 A, 1200V/400 A, 1700V/400 A. The driver has built-in DC/DC converters and is an amplifier – generator of transistor gate control signals with a frequency of up to 25 kHz.

The delay in triggering the unsaturation protection is 2.6 microseconds.

The driver provides the following control, monitoring and protection functions for controlled transistors:

1. control of transistors according to control signals;
2. formation of galvanically isolated voltages for unlocking and locking controlled transistors;
3. saturation voltage monitoring on collectors of controlled transistors, protective shutdown when exiting the saturation state;
4. setting the operating voltage of the unsaturation protection;
5. ensuring a smooth transition of the driver from the active state to the inactive state in case of an accident (output of the controlled transistor from saturation mode);
6. blocking the control in case of an accident;
7. setting the duration of the control lock in case of an accident;
8. setting the delay in triggering the unsaturation protection;
9. setting the duration of the smooth emergency shutdown of the controlled transistor;
10. alarm about the presence of an accident;
11. blocking the simultaneous activation of transistors of one half-bridge;
12. formation of a "dead" time for switching half-bridge transistors;
13. setting the duration of the "dead" time.