Product Code: ДР1350П-БВ2

DR1350P-BF2

Number of channels: 1
Us [V]: 24
Control signal: FOCL (HFBR2522)
Iout imp [А]: 35
Pout [w]: 5
Uce max [V]: 6500
Power module: -
Analogue: 1IPSE1A65-105H

Документы

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The DR1350P-BF2 driver (hereinafter referred to as the driver) is a single–channel driver of high–power high-voltage IGBT transistors, designed for galvanically isolated control of one powerful transistor with a maximum permissible voltage of up to 6500 V. The driver is an amplifier – generator of transistor gate control signals with a frequency of up to 20 kHz. The driver contains a built-in galvanically isolated DC/DC converter that provides the necessary levels of unlocking and locking voltages at the gate of the transistor.

The driver provides the following control, monitoring and protection functions for the controlled transistor:

  1. monitoring of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state;
  2. ensuring a smooth transition of the driver from the active state to the inactive state in case of an accident (output of the controlled transistor from saturation mode);
  3. blocking the control in case of an accident;
  4. alarm about the presence of an accident;
  5. control of the driver supply voltage at the DC/DC converter input;
  6. control of the supply voltage at the output of the DC/DC converter;
  7. bypass the shutter when it is turned off.

 

 

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