The MD2170P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors (half-bridge) with a maximum permissible voltage up to 1700 V. The driver is an amplifier – generator of gate control signals of transistors with a frequency of up to 100 kHz. The driver contains a built-in galvanically isolated DC/DC converter that provides the necessary levels of unlocking and locking voltages at the gate of the transistor.
The driver provides the following control, monitoring and protection functions for the controlled transistor:
unlocking and locking of controlled transistors in accordance with the with control signals;
monitoring of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state , blocking control in case of an emergency;
alarm about the presence of an emergency situation;
blocking the simultaneous activation of the upper and lower arm;
the delay in switching the upper and lower arms;
control of the supply voltage of the driver and the output of the DC/DC converter.
