Product Code:
ДР1350-В4-1-33
The DR1350-F4 driver is a single–channel driver of high-power high-voltage IGBT transistors designed for galvanically isolated control of one powerful transistor with a maximum permissible voltage of up to 3300 V. The driver is an amplifier – generator of transistor gate control signals with a frequency of up to 20 kHz.
The driver is designed for operation in combination with the MIP-DR-65 power supply, which provides the necessary levels of logic, unlocking and locking voltages.
The driver provides the following control, monitoring and protection functions for the controlled transistor:
- transistor control with the status of the front and rear control edges;
- control of the saturation voltage on the collector of a controlled transistor;
- smooth shutdown when exiting the saturation state in half-bridge mode;
- no shutdown when exiting the saturation state in three-level mode;
- blocking the control in case of an accident in half-bridge mode;
- alarm about the presence of an accident;
- monitoring of supply voltages with undervoltage protection;
- active protection of the controlled transistor against overvoltage during switching of an inductive load and in case of an accident (Active clamping);
- bypass of the shutter at shutdown (Miller clamping).
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