The modules based on MOSFETs, IGBTs and control circuits including current and overload protection units intended for operation as relay elements in DC networks with peak voltage up to 1200 V and DC up to 400 A. The modules are created based on transformer and optical decoupling.
Type | Schema | Description | U,V | I,А | Housing | User's Manual |
With transformer insulation | ||||||
МТ14 | ![]() ![]() |
Relay based on Mosfet-transistor |
<250 | <400 |
|
|
МТ15D | ![]() ![]() |
Relay based on Igbt-transistor |
<1200 | <300 | ||
МТ14PТ | ![]() ![]() |
Relay based on Mosfet-transistor
with current protection |
<250 | <400 | VM ,DM | |
МТ15PТ | ![]() ![]() |
Relay based on Igbt-transistor with current protection
|
<1200 | <240 | VM ,DM | |
МТ14-PP1 | ![]() ![]() |
Relay based on Mosfet-transistor
|
<800 | <5 |
|
|
МТ14-PP2 | ![]() ![]() |
<800 | <5 | |||
МТ14-PP6 | ![]() ![]() |
<200 | <2.5 |
- |
||
МТ15D-PP1 | ![]() ![]() |
Relay based on Igbt-transistor
|
<1200 | <2.5 | ||
МТ15D-PP6 | ![]() ![]() |
<1200 | <2.5 |
- |
||
МТ14PТ-PP1 | ![]() ![]() |
Relay based on Mosfet-transistor with current protection
|
<400 | <5 | ||
МТ14PТ-PP2 | ![]() ![]() |
<400 | <5 | |||
МТ14PТ-PP3 | ![]() ![]() |
<400 | <10 | |||
2МТ14PТ-PP4 | ![]() ![]() |
Dual relay based on Mosfet-
transistor with current protection
|
<400 | <5 | ||
2МТ14PТ-PP5 | ![]() ![]() |
<400 | <10 | |||
МТ15PТ-PP1 | ![]() ![]() |
Relay based on Igbt-transistor with current protection
|
<1200 | <2 | ||
МТ15PТ-PP2 | ![]() ![]() |
<1200 | <2 | |||
МТ15ПТ-PP3 | ![]() ![]() |
<1200 | <4 | |||
With optical isolation | ||||||
МО14 | ![]() ![]() |
Relay based on Mosfet-transistor
|
<250 | <400 | VM ,DM |
|
МО15D | ![]() ![]() |
Relay based on Igbt-transistor
|
<1200 | <300 | VM ,DM | |
Based on bipolar transistor | ||||||
МО17 | ![]() ![]() |
Relay with direct control |
<60 | <12 |
|
|
МО18 | ![]() ![]() |
Relay with inverse control |
<60 | <12 |