The assemblies of MOSFET are intended yo operate in transistor low-voltage rectifiers with maximum DC up to 400 A. The modules are represented by the single switches, half-bridges, upper and low switches, inverters assemblies with an amount of peak voltage 60, 100, 200, 250, 400 V.
| Type | Circuit | Description | U,В | I,А | Housing | User's manual |
| Modules in disign version E2, DM | ||||||
| М9 |   |
Single transistor | <250 | <500 |
|
|
| М12 |  |
Half-bridge | <250 | <500 | ||
| М12.1 |  |
Back-to-back transistors | <250 | <500 | ||
| М13А |  |
Three-phase inverter | <200 | <90 |
|
|
| М13B |  |
Two-phase inverter | <200 | <90 | ||
| М13V |  |
Two skew bridges | <200 | <90 | ||
| Modules in disign version MKKT | ||||||
| М13МА | |
Three-phase inverter |
<200 | <10 |
|
|
| М13MB | |
Two-phase inverter |
<200 | <10 | ||
| Modules in disign version PP4 | ||||||
| М13А-PP4 | |
Three-phase inverter |
<200 | <2 |
|
|
| М13B-PP4 | |
Two-phase inverter |
<200 | <2 | ||
| Modules in disign version М1 | ||||||
| М12 | |
Half-bridge |
<100 | <370 |
|
|
| М12 | |
Half-bridge |
<200 | <300 | ||
