DR1270P-BF1-12

The DR1270P-BF1 driver is a single–channel driver of high-power IGBT and MOSFET field-controlled transistors (IGBT or MOSFET), designed for galvanically isolated control of a single powerful transistor. The driver is an amplifier – generator of transistor gate control signals with a frequency of up to 20 kHz. The driver contains a built-in galvanically isolated DC/DC converter that provides the necessary levels of unlocking and locking voltages at the gate of the transistor.

The driver provides the following control, monitoring and protection functions for the controlled transistor:

1. monitoring of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state;
2. ensuring a smooth transition of the driver from the active state to the inactive state in case of an accident (output of the controlled transistor from saturation mode);
3. blocking the control in case of an accident;
4. alarm about the presence of an accident;
5. control of the driver supply voltage at the DC/DC converter input;
6. control of the supply voltage at the output of the DC/DC converter;
7. active protection of the controlled transistor against overvoltage during switching of an inductive load and in case of an accident;
8. bypass the shutter when it is turned off.