DR2200P-B2

The IGBT and silicon carbide transistor driver DR2200P-B2 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (SiC-MOSFET) or IGBT transistors with maximum permissible voltage up to 1700 V. The driver is an amplifier – generator of gate control signals of transistors with a frequency of up to 200 kHz. The driver contains a built-in galvanically isolated DC/DC converter that provides the necessary levels of unlocking and locking voltages at the gate of the transistor.

The driver provides the following control, monitoring and protection functions for the controlled transistor:

1. monitoring of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state;
2. adjustment of the threshold of the protective shutdown by saturation voltage;
3. ensuring a smooth transition of the driver from the active state to the inactive state in case of an emergency (output of the controlled transistor from saturation mode);
4. blocking the control in case of an emergency;
5. alarm about the presence of an emergency situation;
6. adjustment of the on-off time of the controlled transistor by changing the resistance of the resistors in the output circuit (Ron, Roff);
7. blocking the simultaneous activation of the upper and lower arm; the delay in switching the upper and lower arms;
8. adjustment of the delay for switching the upper and lower arm;
9. monitoring of driver supply voltages (built-in comparators) at the output of the DC/DC converter;
10. protection of the controlled module from overheating.