DR2160P-B1

The DR2162P-B1 driver is a semi–bridge driver for high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with a maximum permissible voltage of up to 1700 V. The driver is an amplifier – generator of gate control signals of transistors with a frequency of up to 50 kHz.

The driver provides the following control, monitoring and protection functions for the controlled transistor:

1. monitoring of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state;
2. adjustment of the threshold of the protective shutdown by saturation voltage;
3. ensuring a smooth transition of the driver from the active state to the inactive state in case of an emergency (output of the controlled transistor from saturation mode);
4. blocking the control in case of an emergency;
5. alarm about the presence of an emergency situation;
6. adjustment of the on-off time of the controlled transistor by changing the resistance of the resistors in the output circuit (Ron, Roff);
7. blocking the simultaneous activation of the upper and lower arm;
8. the delay in switching the upper and lower arms;
9. monitoring of driver supply voltages (built-in comparators) at the output of the DC/DC converter;
10. temperature protection of the controlled modules.