Product Code: ДР6120П-Б

DR6120P-B

Number of channels: 6 (3 h/b)
Us [V]: 15
Control signal: 5 V
Iout imp [А]: 12
Pout [w]: 6х3
Uce max [V]: 1700
Power module: -
Analogue: -

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The DR6120P-B driver is a six–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents and voltages of 600V/600 A, 1200V/400 A, 1700V/400 A. The driver has built-in DC/DC converters and is an amplifier – generator of transistor gate control signals with a frequency of up to 25 kHz.

The delay in triggering the unsaturation protection is 2.6 microseconds.

The driver provides the following control, monitoring and protection functions for controlled transistors:

  1. control of transistors according to control signals;
  2. formation of galvanically isolated voltages for unlocking and locking controlled transistors;
  3. saturation voltage monitoring on collectors of controlled transistors, protective shutdown when exiting the saturation state;
  4. setting the operating voltage of the unsaturation protection;
  5. ensuring a smooth transition of the driver from the active state to the inactive state in case of an accident (output of the controlled transistor from saturation mode);
  6. blocking the control in case of an accident;
  7. setting the duration of the control lock in case of an accident;
  8. setting the delay in triggering the unsaturation protection;
  9. setting the duration of the smooth emergency shutdown of the controlled transistor;
  10. alarm about the presence of an accident;
  11. blocking the simultaneous activation of transistors of one half-bridge;
  12. formation of a "dead" time for switching half-bridge transistors;
  13. setting the duration of the "dead" time.

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