Modules based on IGBT-transistors
The modules are constructively analogous to power modules of Microsemi, Semikron and Infineon production. The modules are represented with various construction versions analogous to «Semitrans 2», «Semitrans 4», «sp4», «sp6» housings. The modules can be operated in converters with peak voltage up to 1700V and load current up to 300A.
Type |
Circuit |
Description |
U,В |
I,А |
Housing |
User's manual |
Modules in disign version E2, DM |
М9 |
|
Single transistor |
<1200 |
<200 |
E2,DM
|
|
М10 |
|
Lower switch |
<1200
|
<200 |
E2,DM
|
М11 |
|
Upper switch |
<1200 |
<200 |
E2,DM
|
М12 |
|
Half-bridge |
<1200 |
<200 |
E2,DM Габаритный чертеж корпуса ДМ
|
М12.1 |
|
Back-to-back
transistors
|
<1200 |
<200 |
DM
|
М13А |
|
Three-phase inverter |
<1200 |
<50 |
DM
|
|
М13B |
|
Two-phase inverter |
<1200 |
<50 |
DM
|
М13V |
|
Two skew bridges |
<1200 |
<50 |
DM
|
Modules in disign version MKKT |
М13МА |
|
Three-phase inverter
|
<600 |
<10 |
MKKT
|
|
М13МB |
|
Two-phase inverter
|
<600 |
<10 |
MKKT
|
Modules in disign version PP4 |
М13А-PP4 |
|
Three-phase inverter
|
<600 |
<1 |
PP4
|
|
М13B-PP4 |
|
Two-phase inverter
|
<600 |
<1 |
PP4
|
Modules in disign version E2 |
М10 |
|
Lower switch
|
<1200 |
<150 |
Е2
|
|
М11 |
|
Upper switch
|
<1200 |
<150 |
Е2
|
М12 |
|
Half-bridge
|
<1200 |
<150 |
Е2
|
Modules in disign version E3 |
М10 |
|
Lower switch
|
<1200 |
<300 |
Е3
|
|
М11 |
|
Upper switch
|
<1200 |
<300 |
Е3
|
М12 |
|
Half-bridge
|
<1200 |
<300 |
Е3
|
Modules in disign version M1 |
М9.1 |
|
Two single switches
|
<1700 |
<300 |
М1
|
|
М10 |
|
Lower switch
|
<1700 |
<300 |
М1
|
М11 |
|
Upper switch
|
<1700 |
<300 |
М1
|
М12 |
|
Half-bridge
|
<1700 |
<300 |
М1
|
М12.1 |
|
Back-to-back
transistors
|
<1700 |
<300 |
М1
|
М13А1 |
|
Three Half-bridge
|
<1700 |
<150 |
М1
|
М13А4 |
|
Rectifier bridge and chopper
|
<1700 |
<100 |
М1
|
М13А5 |
|
Three-level inverter
|
<1700 |
<300 |
М1
|
М13B |
|
Н-bridge
|
<1700 |
<200 |
М1
|
М13B1 |
|
Skew bridge
|
<1700 |
<200 |
М1
|
Modules in disign version М2 |
М10 |
|
Lower switch
|
<1200 |
<300 |
М2
|
|
М11 |
|
Upper switch
|
<1200 |
<300 |
М2
|
М12 |
|
Half-bridge
|
<1200 |
<300 |
М2
|
М12.1 |
|
Back-to-back
transistors
|
<1200 |
<200 |
М2
|
М13B |
|
Н-bridge
|
<1200 |
<150 |
М2
|
М13B1 |
|
Skew bridge
|
<1200 |
<150 |
М2
|
М13Е |
|
Rectifier bridge and chopper
|
<1200 |
<50 |
М2
|