Product Code: 5ДР2120П-А1

5DR2120P-A1

Number of channels: 2
Us [V]: 15
Uc [В]: 5
Iout imp [А]: 12
Pout [w]: 2х3
Uce max [V]: 1700

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The high-power transistor driver (BTIZ or MOSFET) with field control 5DR2120P-A1 is designed for dependent galvanically isolated control of two high-power transistors with a maximum permissible voltage up to 1700 V. The driver is an amplifier – generator of gate control signals of transistors with a frequency of up to 100 kHz.

The driver provides the following control, monitoring and protection functions for the controlled transistor:

- control of the saturation voltage on the collectors of controlled transistors, protective shutdown when exiting the saturation state;

- adjustment of the threshold of the protective shutdown according to the saturation voltage;

- ensuring a smooth transition of the driver from the active state to the inactive state in an "emergency" situation (output of the controlled transistor from saturation mode);

- adjustment of the delay in the operation of the unsaturation protection;

- adjustment of the duration of a smooth emergency shutdown;

- blocking the control in the emergency mode;

- external or automatic reset of the crash mode;

- adjustment of the duration of the persbros in the emergency mode;

- alarm about the presence of an accident;

- formation of "dead" time for switching transistors;

- adjustment of the duration of the "dead" time;

- blocking the simultaneous switching on of transistors;

- control of supply voltages (built-in comparator) at the driver outputs;

- limiting the voltage at the gates of controlled transistors.

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