The high-power transistor driver (BTIZ or MOSFET) with field control 1DR1120P-A1 is designed for galvanically isolated control of a high-power transistor with a maximum permissible voltage up to 1700 V. The driver is an amplifier – generator of gate control signals of transistors with a frequency of up to 100 kHz.
The driver provides the following control, monitoring and protection functions for the controlled transistor:
- control of the saturation voltage on the collector of the controlled transistor, its protective shutdown when exiting the saturation state;
- adjustment of the threshold of the protective shutdown according to the saturation voltage;
- ensuring a smooth transition of the driver from the active state to the inactive state in an "emergency" situation (output of the controlled transistor from saturation mode);
- adjustment of the unsaturation response delay;
- adjustment of the duration of a smooth emergency shutdown;
- blocking the control in the emergency mode;
- external or automatic reset of the crash mode;
- adjustment of the duration of the reset in the emergency mode;
- alarm about the presence of an accident;
- control of supply voltages (built-in comparator) at the driver output;
- voltage limitation at the gate of the controlled transistor.
