Product Code:
1М11-30-6-М3
The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
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-280x280.jpg "DR2150P-B2")
The DR2150P-B2 driver is a two–channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two transistors with a maximum permissible voltage of up to 1700 V in..
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The MD150C driver is a single–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of a powerful field-controlled transistor. The driver is an amplifier – generato..
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