Product Code:
1М10-200-6
The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
Просмотренные
The MOSFET module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
..
0.00 р.
The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
..
0.00 р.
The 1M31MB module is an assembly of power transistors (two–phase inverter) with control circuits (drivers). The module is designed to control a powerful active inductive load with a switchin..
0.00 р.
The DR2180P-B3 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control of two high-power transistors with ..
0.00 р.
The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
..
0.00 р.
