Product Code:
ДР2190П-БВ2
DR2190P-BF2 driver is a two-channel driver of high-power field-effect transistors (MOSFET or IGBT), designed for galvanically isolated control of two transistors with a maximum allowable voltage of up to 1700 V in the EconoDUAL package. The driver is an amplifier that generates control signals for the transistor gates at a frequency of up to 100 kHz. The driver contains a built-in galvanically isolated DC/DC converter that provides the necessary levels of gate-to-gate voltage for the transistors.
The driver provides the following control, monitoring, and protection functions for the controlled transistor:
- Gate-to-gate voltage for the controlled transistors in accordance with the control signals;
- Control of the saturation voltage on the collector of the controlled transistor, and its smooth shutdown when it exits the saturation state;
- Control lock-out in case of an emergency, with adjustable lock-out duration;
- Alarm for an emergency situation;
- No simultaneous activation lock in independent mode;
- Simultaneous activation lock of the upper and lower arms in dependent mode;
- Adjustable delay for switching the upper and lower arms;
- Collector overvoltage protection ("Active Clamping");
- Control of DC/DC converter output voltages;
- Power module overheating protection.
