Product Code:
ДР2150П-БВ2
DR2150P-BF2 driver (hereinafter referred to as the driver) is a two-channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two transistors with a maximum voltage of up to 1700 V in the EconoDUAL package. The driver is an amplifier that generates control signals for the transistor gates at a frequency of up to 100 kHz. The driver includes a built-in galvanically isolated DC/DC converter that provides the necessary levels of gate-to-gate voltage for the transistors.
The driver provides the following control, monitoring and protection functions of the controlled transistor:
- unlocking and locking of controlled transistors in accordance with control signals;
- control of saturation voltage on the collector of the controlled transistor, its smooth shutdown when it leaves the saturation state;
- control blocking in an emergency situation with adjustment of the blocking duration;
- alarm of the presence of an emergency situation;
- no blocking of simultaneous inclusion in independent mode;
- blocking of simultaneous inclusion of the upper and lower shoulder in dependent mode;
- adjustable delay for switching the upper and lower shoulders;
- protection against overvoltage of the collector ("Active Clamping");
- control of power supply voltages at the output of the DC/DC converter;
- protection against overheating of the power module.
