Driver DR2100P-B - a two-channel driver of powerful field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two powerful transistors with a maximum permissible voltage of up to 1700 V. The driver is an amplifier - a generator of control signals for the gates of transistors with a frequency of up to 50 kHz. The driver contains a built-in galvanically isolated DC/DC converter, which provides the necessary levels of unlocking and locking voltages at the gates of transistors.
The driver includes components only manufactured in Russia and Belarus.
The driver provides the following controlled transistor control, monitoring and protection functions:
1 unlocking and locking of controlled transistors in the honeycomb. with control signals;
2 monitoring of saturation voltage on the collector of the controlled transistor, its smooth disconnection when exiting the saturation state
3 interlock of control in case of emergency with adjustment of interlock duration;
4 alarm of emergency situation;
5 absence of interlocking of simultaneous activation in independent mode;
6 blocking of simultaneous activation of upper and lower arms in dependent mode;
7 adjustable delay for switching the upper and lower arms;
8 control of supply voltages at DC/DC converter input and output.
