The DR6100P-B driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges) ..
The IGBT and silicon carbide transistor driver DR2200P-B2 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (..
The DR6100P-B3 driver is a six–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of six high-power transistors (three half-bridges)..
The M32 inverter module is an assembly of power transistors (three-phase or two-phase inverter) with control and protection circuits.
The module is designed to control a powerful active-inductive lo..
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