Product Code:
М4.1ШБ-80-1,25-Е1
The single Schottky diode is intended for using composed of high-powered converters.
Просмотренные
The IGBT and silicon carbide transistor driver DR2200P-B1 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transist..
0.00 р.
The DR4120P-B driver is a four–channel MOSFET and IGBT transistor driver designed for galvanically isolated control of four powerful field-controlled transistors with maximum permissible currents..
0.00 р.
