The diode module on the basis fast-recovery diodes is intended for converting of AC into pulsating DC (as a part of single- and three-phase diode bridges).
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The MD2170P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors (half-bridge) with a..
The MD2180P-B driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT..
The 1MI type special-purpose inverter module is designed for use in power supplies, power drive devices, on-board equipment complexes of special-purpose electronic equipment, developed and modernized ..
The high-power transistor driver (BTIZ or MOSFET) with field control 1DR1120P-A1 is designed for galvanically isolated control of a high-power transistor with a maximum permissible voltage up to 1700 ..
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