Clarification of technical data
10.11.2025 г.
Parameter specification:
-"Voltage of the non-saturation protection": 25 – 250 V.
-"Insulation voltage": 10000 AC.
See the passport (DR1350-F4 var.3, MIP-DR-65 var.1, DR1350P-BF var.5, DR1350P-BF2 var.6, DR1270P-BF1 var.2).
Single-channel drivers of high-power high-voltage IGBT transistors are designed for galvanically isolated control of a single high-power transistor with a maximum voltage of up to 6500 V. The drivers are gate-control signal amplifiers with a frequency of up to 20 kHz.
For more information, please contact:
Russia, 302020 Eagle, Naugorskoe highway, 5
Marketing Department - 8(4862)44-03-48;
The Development department is 8(4862)44-03-94.
