New generation driver development

Drivers MD2150P-B, MD2190P-B, DR2150P-B(1,2,B), DR2190P-B(1,2,B) – two-channel drivers of powerful IGBT-transistors (series 2190) or SiC-MOSFET-transistors (series 2150), designed for galvanically isolated control of two powerful transistors with a maximum allowable voltage up to 1700 V.

The drivers are amplifiers that generate control signals for the transistor gates at a frequency of up to 100 kHz and contain a built-in galvanically isolated DC/DC converter that provides the necessary levels of gate-to-gate voltage.

Compared to drivers based on the MD2180, the developed drivers have the following advantages:

- Ability to operate in dependent and independent modes (without any modifications);

- Extended control signal range of 3.5...15 V (without any modifications);

- Protection against low supply voltage with tripping status;

- Additional "Miller Clamp" function;

- Increased noise immunity;

- Increased insulation resistance;

- Increased du/dt resistance;

- Better mechanical and thermocyclic durability (due to the absence of sealing).

For more information, please contact:

Russia, 302020 Orel, Naugorskoe highway, 5

Marketing Department - 8(4862)44-03-48;

The Development department is 8(4862)44-03-94.