New developments

Product Name

Description

MO8MA-MC

  The optoelectronic module, a single-phase relay with phase transition control, soft switching, current limitation (during startup and during operation), and overcurrent protection, is designed for switching active loads in AC circuits.

Launched into production

3phTMD-6-DIN1

3phTMD-6.1-DIN1

3phTMD-6.2-DIN1

The three-phase adjustable rectifier driver is designed to build rectifiers of three-phase alternating voltage in networks with a frequency of 40 – 440 Hz into pulsating direct voltage based on a three-phase controlled thyristor bridge using the phase control method.

The main differences and novelty of the solutions used are:

• operating frequency range from 40 to 440 Hz (auto-tuning);
• supply voltage of 5 V or from 9 to 30 V;
• soft start when mains voltage is applied;
• time delay after mains voltage is applied (to eliminate voltage surges at the output);
• blanking of switching surges and dips in the synchronizing pulse;
• fixed time delay of 1 s after current protection is triggered;
• soft start duration is tied to the number of mains voltage periods;
• control pulses are formed in a multi-channel timer with a single time base;
• quick-release terminal connections.   

  Applications:

• Rectifiers for powering IGBT inverters with the ability to charge capacitor banks smoothly.
• Rectifiers for charging batteries.
• Rectifiers for cathodic anti-corrosion protection devices.
• Rectifiers for powering DC drives.

DM2150P-B

DR2150P-B

DR2150P-B1

DR2150P-B2

DR2150P-BF

  A dual-channel driver for high-power SiC-MOSFET transistors, designed for dependent or independent galvanically isolated control of two transistors with a maximum voltage of up to 1700 V.

  The developed drivers offer the following advantages over the MD2180-based drivers:

• support for both dependent and independent modes (without specific implementations);
• extended control signal range of 3.5 to 15 V (without specific implementations);
• low-power protection with trigger status;
• additional "Miller Clamp" function;
• increased noise immunity;
• increased insulation resistance;
• increased du/dt resistance;
• better mechanical and thermocyclic durability (due to the absence of sealing).

M2190P-B

DR2190P-B

DR2190P-B1

DR2190P-B2

DR2190P-BF

  A dual-channel driver for high-power field-effect transistors (MOSFETs or IGBTs) designed for galvanically isolated control of two high-power transistors with a maximum voltage of up to 1700 V.

  The developed drivers offer the following advantages over the MD2180-based drivers:

• support for both dependent and independent modes (without specific implementations);
• extended control signal range of 3.5 to 15 V (without specific implementations);
• low-power protection with trigger status;
• additional "Miller Clamp" function;
• increased noise immunity;
• increased insulation resistance;
• increased du/dt resistance;
• better mechanical and thermocyclic durability (due to the absence of sealing).