The modules based on MOSFETs, IGBTs and control circuits including current and overload protection units intended for operation as relay elements in DC networks with peak voltage up to 1200 V and DC up to 400 A. The modules are created based on transformer and optical decoupling.
| Type | Schema | Description | U,V | I,А | Housing | User's Manual |
| With transformer insulation | ||||||
| МТ14 |   |
Relay based on Mosfet-transistor |
<250 | <400 |
|
|
| МТ15D |  |
Relay based on Igbt-transistor |
<1200 | <300 | ||
| МТ14PТ |  |
Relay based on Mosfet-transistor
with current protection |
<250 | <400 | VM ,DM | |
| МТ15PТ |  |
Relay based on Igbt-transistor with current protection
|
<1200 | <240 | VM ,DM | |
| МТ14-PP1 | |
Relay based on Mosfet-transistor
|
<800 | <5 |
|
|
| МТ14-PP2 | |
<800 | <5 | |||
| МТ14-PP6 | |
<200 | <2.5 |
- |
||
| МТ15D-PP1 | |
Relay based on Igbt-transistor
|
<1200 | <2.5 | ||
| МТ15D-PP6 | |
<1200 | <2.5 |
- |
||
| МТ14PТ-PP1 | |
Relay based on Mosfet-transistor with current protection
|
<400 | <5 | ||
| МТ14PТ-PP2 | |
<400 | <5 | |||
| МТ14PТ-PP3 | |
<400 | <10 | |||
| 2МТ14PТ-PP4 |  |
Dual relay based on Mosfet-
transistor with current protection
|
<400 | <5 | ||
| 2МТ14PТ-PP5 | |
<400 | <10 | |||
| МТ15PТ-PP1 | |
Relay based on Igbt-transistor with current protection
|
<1200 | <2 | ||
| МТ15PТ-PP2 | |
<1200 | <2 | |||
| МТ15ПТ-PP3 | |
<1200 | <4 | |||
| With optical isolation | ||||||
| МО14 |  |
Relay based on Mosfet-transistor
|
<250 | <400 | VM ,DM |
|
| МО15D |  |
Relay based on Igbt-transistor
|
<1200 | <300 | VM ,DM | |
| Based on bipolar transistor | ||||||
| МО17 |  |
Relay with direct control |
<60 | <12 |
|
|
| МО18 | |
Relay with inverse control |
<60 | <12 | ||
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