The modules based on MOSFETs, IGBTs and control circuits including current and overload protection units intended for operation as relay elements in DC networks with peak voltage up to 1200 V and DC up to 400 A. The modules are created based on transformer and optical decoupling.
Type | Schema | Description | U,V | I,А | Housing | User's Manual |
With transformer insulation | ||||||
МТ14 |
Relay based on Mosfet-transistor |
<250 | <400 |
|
||
МТ15D |
Relay based on Igbt-transistor |
<1200 | <300 | |||
МТ14PТ |
Relay based on Mosfet-transistor
with current protection |
<250 | <400 | VM ,DM | ||
МТ15PТ |
Relay based on Igbt-transistor with current protection
|
<1200 | <240 | VM ,DM | ||
МТ14-PP1 |
Relay based on Mosfet-transistor
|
<800 | <5 |
|
||
МТ14-PP2 | <800 | <5 | ||||
МТ14-PP6 | <200 | <2.5 |
- |
|||
МТ15D-PP1 |
Relay based on Igbt-transistor
|
<1200 | <2.5 | |||
МТ15D-PP6 | <1200 | <2.5 |
- |
|||
МТ14PТ-PP1 |
Relay based on Mosfet-transistor with current protection
|
<400 | <5 | |||
МТ14PТ-PP2 | <400 | <5 | ||||
МТ14PТ-PP3 | <400 | <10 | ||||
2МТ14PТ-PP4 |
Dual relay based on Mosfet-
transistor with current protection
|
<400 | <5 | |||
2МТ14PТ-PP5 | <400 | <10 | ||||
МТ15PТ-PP1 |
Relay based on Igbt-transistor with current protection
|
<1200 | <2 | |||
МТ15PТ-PP2 | <1200 | <2 | ||||
МТ15ПТ-PP3 | <1200 | <4 | ||||
With optical isolation | ||||||
МО14 |
Relay based on Mosfet-transistor
|
<250 | <400 | VM ,DM |
|
|
МО15D |
Relay based on Igbt-transistor
|
<1200 | <300 | VM ,DM | ||
Based on bipolar transistor | ||||||
МО17 |
Relay with direct control |
<60 | <12 |
|
||
МО18 |
Relay with inverse control |
<60 | <12 |