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Modules based on IGBT-transistors

The modules are constructively analogous to power modules of Microsemi, Semikron and Infineon production. The modules are represented with various construction versions analogous to «Semitrans 2», «Semitrans 4», «sp4», «sp6» housings. The modules can be operated in converters with peak voltage up to 1700V and load current up to 300A.

Type Circuit Description U,В I,А Housing User's manual
Modules in disign version E2, DM
М9                                    Single transistor <1200 <200

E2,DM

 

 

 

 

 

PDF

 

 

 

 

М10                                    Lower switch <1200
<200

E2,DM

М11                                    Upper switch <1200 <200

E2,DM

М12                                    Half-bridge <1200 <200

E2,DM
     Габаритный чертеж корпуса ДМ    

М12.1                                   

Back-to-back

 transistors

<1200 <200

DM

М13А                                    Three-phase inverter <1200 <50

DM

 

 

PDF

М13B                                    Two-phase inverter <1200 <50

DM

М13V                                    Two skew bridges <1200 <50

DM

Modules in disign version MKKT
М13МА                                   

Three-phase inverter

<600 <10

MKKT  

 

PDF

 

М13МB                                   

Two-phase inverter

<600 <10

MKKT 

Modules in disign version PP4
М13А-PP4                                    

Three-phase inverter

 <600 <1 

PP4

 

 PDF 

 

 

М13B-PP4                                    

Two-phase inverter

 <600  <1

PP4 

Modules in disign version E2
М10                                   

Lower switch

<1200 <150

Е2

 

 PDF

 

М11                                   

Upper switch

<1200 <150

Е2

М12                                   

Half-bridge

<1200 <150

Е2

Modules in disign version E3
М10                                   

Lower switch

<1200 <300

Е3

 

 PDF

 

М11                                   

Upper switch

<1200 <300

Е3

М12                                   

Half-bridge

<1200 <300

Е3

Modules in disign version M1
М9.1                                   

Two single switches

<1700   <300

М1 

 

 

 

 

 

 

 

 

 

 

 

PDF 

 

 

 

М10                                   

Lower switch

<1700 <300 

М1 

М11                                   

Upper switch

<1700   <300

М1 

М12                                   

Half-bridge

<1700  <300 

М1 

М12.1                                   

 

Back-to-back

 transistors

 

 <1700 <300 

М1 

М13А1                                   

Three Half-bridge

 <1700  <150

М1 

М13А4                                   

Rectifier bridge and chopper

 <1700 <100 

М1 

М13А5                                   

Three-level inverter

<1700  <300 

М1 

М13B                                   

Н-bridge

<1700  <200 

М1 

М13B1                                   

Skew bridge

<1700  <200 

М1 

Modules in disign version М2
М10                                    

Lower switch

 <1200 <300 

М2

 

 

 

 

 

 

PDF 

 

 

 

М11                                    

Upper switch

<1200  <300 

 М2 

М12                                    

Half-bridge

 <1200 <300 

 М2 

М12.1                                    

 

Back-to-back

 transistors

 

 

<1200  <200 

М2

М13B                                    

Н-bridge

<1200  <150 

М2

М13B1                                    

Skew bridge

<1200  <150 

 М2 

М13Е                                    

Rectifier bridge and chopper 

<1200  <50 

 М2 

 

 

 

 

 

 

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