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The DR2180P-B6 driver (hereinafter referred to as the driver) is a two–channel driver of high–power field-controlled transistors (MOSFET or IGBT), designed for dependent galvanically isolated control ..
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The IGBT and silicon carbide transistor driver DR2200P-B1 of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transist..
0.00 р.
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