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p-b-280x280.jpg "DM2150P-B")
The DM2150P-B driver is a two–channel driver for high-power SiC-MOSFET transistors with field control, designed for galvanically isolated control of two high-power transistors with a maximum allowable..
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The MD2170P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors (half-bridge) with a..
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The MD2180P-B driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT..
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The MD2180P-B1 driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGB..
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The MD2190P-B driver is a two–channel driver for high-power field-effect transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors with a maximum allowable..
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The MD2300P-B1 driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated control of two high-power transistors with a maximum permi..
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The MD270P-B driver is a two–channel driver of high-power field-controlled transistors (MOSFET or IGBT), designed for galvanically isolated dependent or independent control of two high-power transisto..
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The MD280P-B driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT)..
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The MD280P-B1 driver is a two–channel driver of high-power transistors with dependent control, designed for galvanically isolated control of two high-power field-controlled transistors (MOSFET or IGBT..
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The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 100 kHz.
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The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 100 kHz.
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The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 100 kHz.
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The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 100 kHz.
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The IGBT module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 100 kHz.
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The MOSFET module is designed for switching high-power loads and use as part of high-power converters with high switching frequency.
The switching frequency is up to 300 kHz.
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
..
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
..
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
..
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The three-phase thyristor bridge module with control of six thyristors is intended for rectifying (converting of AC into pulsating direct voltage).
..
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