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The DR2150P-B driver is a two–channel SiC-MOSFET transistor driver designed for galvanically isolated control of two high-power transistors with a maximum allowable voltage of up to 1700 V. The d..
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The DR2150P-B1 driver is a two–channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two high-power transistors with a maximum permissible voltage of up t..
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The DR2150P-B2 driver is a two–channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two transistors with a maximum permissible voltage of up to 1700 V in..
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The DR2150P-BF driver is a two–channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two high-power transistors with a maximum allowable voltage of u..
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DR2150P-BF2 driver (hereinafter referred to as the driver) is a two-channel driver for high-power SiC-MOSFET transistors, designed for galvanically isolated control of two transistors with a maximum v..
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