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DM2200P-B
The IGBT and silicon carbide transistor MD2200 driver of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (SiC-..
0.00 р.
DM2200P-B1
The IGBT and silicon carbide transistor MD2200 driver of high-power transistors with dependent control is designed for galvanically isolated control of two high-power silicon carbide transistors (SiC-..
0.00 р.
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